发明名称 |
BASE MATERIAL FOR GROWING SINGLE CRYSTAL DIAMOND AND METHOD FOR PRODUCING SINGLE CRYSTAL DIAMOND SUBSTRATE |
摘要 |
The present invention is a base material for growing a single crystal diamond comprising a single crystal silicon substrate, a MgO film heteroepitaxially grown on a side of the single crystal silicon substrate where the single crystal diamond is to be grown, and an iridium film or a rhodium film heteroepitaxially grown on the MgO film. As a result, there is provided a base material for growing a single crystal diamond and a method for producing a single crystal diamond substrate which can grow the single crystal diamond having a large area and good crystallinity and produce a high quality single crystal diamond substrate at low cost.
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申请公布号 |
US2011081531(A1) |
申请公布日期 |
2011.04.07 |
申请号 |
US20100876531 |
申请日期 |
2010.09.07 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
NOGUCHI HITOSHI |
分类号 |
C30B23/02;B32B7/02;B32B15/04 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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