| 摘要 |
The method involves forming patterns (23) on a semiconductor material e.g. silicon, substrate, where the patterns are formed from a buried layer made of a dielectric material e.g. oxide or nitride. A layer, made of semiconductor material e.g. single-crystal, polycrystalline or amorphous silicon, is formed between and on the patterns, where the layer has a homogeneous surface. Thermal treatment of the semiconductor material layer is carried out to totally or partially modify crystallinity of the layer. The layer is planarized and is assembled with another silicon substrate (30). An independent claim is also included for a semiconductor device comprising a support. |
