| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that a fully-depleted silicon-on-insulator (FD SOI) as the future generation of SOI film is not in production currently due to limitations in thickness control uniformity and defects. <P>SOLUTION: An apparatus and a method are provided for processing substrates and/or wafers in real-time using at least one direct current (DC)/radio frequency (RF) hybrid (DC/RFH) processing system, a related DC/RF hybrid (DC/RFH) procedure, and DC/RFH process parameters and/or DC/RFH models. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
