| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, along with its manufacturing method which includes a silicide layer having a higher heat resistance. SOLUTION: The manufacturing method of a semiconductor device 100 includes a step of forming a gate electrode 5 on a semiconductor substrate 2 through a gate insulating film 4; a step of forming a Ge-contained region 8 on both sides of the gate electrode 5 on the semiconductor substrate 2; a step of forming a source/drain region 9, in the regions on both sides of the gate electrode 5 in the Ge-containing region 8 and the semiconductor substrate 2; and a step of forming a silicide layer 11 containing a metal silicide containing Pd whose concentration is 5 atom% or higher on the Ge-containing region 8, and a step, in which after the silicide layer 11 is formed, the semiconductor substrate 2 is subjected to thermal treatment at 650-750°C. COPYRIGHT: (C)2011,JPO&INPIT
|
