| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that prevents carbon produced when SiC is oxidized from remaining as an impurity in an oxide film (SiO<SB>2</SB>), and improves channel mobility. SOLUTION: The method of manufacturing the semiconductor device includes: a step of forming an oxide silicon film 12 on a substrate 11 with silicon carbide; a step of forming a metal oxide film 13 on the oxide silicon film 12; and a residual carbon-oxidizing step of oxidizing the carbon remaining in the oxide silicon film 12, by performing heat treatment in the atmosphere containing oxygen, and transmitting the oxygen through the metal oxide film 13 and diffusing it into the oxide silicon film 12. COPYRIGHT: (C)2011,JPO&INPIT
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