| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor apparatus capable of suppressing the formation of a parasitic MOS and reducing narrow channelization. SOLUTION: A method of manufacturing a semiconductor apparatus 100 forms a transistor whose source and drain regions are a first conductivity type on an SOI substrate 1, including a supporting substrate 2, an insulating layer 3 and a semiconductor layer 4. The method includes the following steps of forming a first oxidation resistant film 6a' on the semiconductor layer 4; injecting an impurity 7 with a second conductivity type whose conductivity is different from that of the first conductivity type into the semiconductor layer 4 by using the first oxidation resistant film 6a' as a mask; forming a second oxidation resistant film 6b' on a side surface of the first oxidation resistant film 6a' after injecting the impurity 7 with the second conductivity type into the semiconductor layer 4; forming an element separation layer 8 by using the first oxidation resistant film 6a' and the second oxidation resistant film 6b' as masks; and removing the first oxidation resistant film 6a' and the second oxidation resistant film 6b' from the semiconductor layer 4, after the element separation layer 8 is formed. COPYRIGHT: (C)2011,JPO&INPIT
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