| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate for efficiently manufacturing a semiconductor device using SiC. SOLUTION: The method includes preparing a first silicon carbide substrate 11 having a first surface F1 and a first backside B1 opposing to each other and having a single crystal structure, and a second silicon carbide substrate 12 having a second surface F2 and a second backside B2 opposing to each other and having a single crystal structure. The first and second silicon carbide substrates 11, 12 are disposed so that the first and second backsides B1, B2 can be directed in the same direction. After a step of disposition, a connection layer 30 containing carbon, which is bonded to the first and second backsides B1, B2 so as to connect the first and second backsides B1, B2, is formed. COPYRIGHT: (C)2011,JPO&INPIT
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