发明名称 |
LITHO-LITHO ETCH (LLE) DOUBLE PATTERNING METHODS |
摘要 |
Litho-litho-etch double patterning (LLE-DP) methods using silylation freeze technology are presented. The LLE-DP method using a silylation freeze reaction comprises providing a substrate with a first photoresist layer thereon. A first exposure process is performed defining a first latent image in a first photoresist. The first patterned structures on the substrate is developed and baked for photo-generated acid diffusion. The photo-generated acid is reacted with a silylation agent to freeze the first patterned structures. A second photoresist layer is formed overlying the substrate. A second lithography process is performed to create second patterned structures on the substrate. The first patterned structures and the second patterned structures are interlaced each other.
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申请公布号 |
US2011081618(A1) |
申请公布日期 |
2011.04.07 |
申请号 |
US20090574650 |
申请日期 |
2009.10.06 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
WANG YI-MING;HUANG PEI-LIN;TSENG YING-CHUNG |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
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