发明名称 |
AIR GAP STRUCTURE AND METHOD OF FORMING AIR GAP |
摘要 |
PROBLEM TO BE SOLVED: To provide an air gap structure for electrically isolating between an element and a wire of a semiconductor device with which an element isolation region can be formed by a simple method, and to provide a method of forming the structure. SOLUTION: The method of forming an air gap 8 in a trench 2 includes an application step of applying an application liquid containing silica particles 5 with an average particle size ranging from≥1.0 time to≤200 nm of an opening width of the trench 2 and a binder component 6 on a first surface 4 of a substrate 1 having the trench 2 with the opening formed on the first surface and a heating step of heating the substrate 1 at a temperature of a thermal decomposition temperature of the binder or higher after the application step. COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011071292(A) |
申请公布日期 |
2011.04.07 |
申请号 |
JP20090220739 |
申请日期 |
2009.09.25 |
申请人 |
ASAHI KASEI E-MATERIALS CORP |
发明人 |
TSUCHIYA AYAKO;MORIYAMA REIKO;SAITO HIDEO;DOI ICHIRO |
分类号 |
H01L21/764;H01L21/316;H01L21/76 |
主分类号 |
H01L21/764 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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