| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor laser that eliminates the need for wire bonding in packaging and having low ohmic resistance. SOLUTION: A current block section is formed at both sides of an active layer on a first main surface of a mesa substrate. A second cladding layer and a contact layer are formed sequentially on the active layer and the current block section. An opening reaching the mesa substrate through the contact layer, second cladding layer, and current block section is formed by wet etching. A first ohmic electrode is formed on the contact layer. A first cladding layer is formed by performing rear surface polishing of the mesa substrate. A second ohmic electrode is formed on a second main surface of the first cladding layer. A side face electrode electrically connected to the second ohmic electrode is formed on an insulation film formed on an inner wall surface of the opening, and a first contact electrode electrically connected to the first ohmic electrode and a second contact electrode electrically connected to the side face electrode are formed on the insulation film formed on the contact layer. COPYRIGHT: (C)2011,JPO&INPIT
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