| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which controls the oxidation of a variable resistance film or the like in a manufacturing process by covering the whole side wall surfaces of an ReRAM cell by a silicon nitride film excellent in oxidation resistance performance and has a high stability and a high data retention nature of a state of the ReRAM cell, and to provide a method of manufacturing the semiconductor memory device. SOLUTION: The ReRAM cell is constituted by the following components, for example a first electrode 11 consisting of a conductive material, a diode 12 consisting of polycrystalline silicon, a second electrode 13 consisting of the conductive material, a variable resistance film 14 consisting of a transition metal oxide film, and a third electrode 15 consisting of the conductive material. Moreover, on the whole side wall surfaces of the ReRAM cell, there is formed a side wall insulating film 20 using the silicon nitride film as a principal component, and furthermore at the outside thereof, there is formed an insulating film 21 between cells using a silicon oxide film as a principal component. COPYRIGHT: (C)2011,JPO&INPIT
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