| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method and an apparatus thereof, capable of generating plasma suitable to a process by controlling the kind of radical species or ion species existing in plasma or density thereof, and switching the plasma state, depending on the presence or absence of radiation of light having a controllable radiation range. SOLUTION: In the plasma etching method including introducing a process gas at a predetermined flow rate into a process chamber, keeping the inside of the process chamber at a constant pressure, exciting a gas inside the process chamber by using a power supply and generating plasma, and etching a material to be etched by the plasma, a light for further inducing optical dissociation of gas molecules in the inside of the process chamber from the light source into the inside of the process chamber, and the light is such that its radiation range can be expanded or reduced by an optical system arranged between the light source and an inlet to the chamber. COPYRIGHT: (C)2011,JPO&INPIT
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