| 摘要 |
A semiconductor package containing a field effect transistor (FET) used in a high frequency band includes a mounting circuit substrate on which the semiconductor device is mounted. The mounting circuit substrate has a gate wiring conductor, a drain wiring conductor, and a source wiring conductor, which are connected to the gate electrode, the drain electrode, and the source electrode, respectively, of the semiconductor device. The gate wiring conductor and the drain wiring conductor extend toward each other so that their adjacent or facing ends are in close proximity to each other, thereby increasing the capacitance between the gate wiring conductor and the drain wiring conductor.
|
