Silicon wafer holes coating method for microlithography application, involves bringing particles with center diameter into prepared holes of substrate, and melting particles brought into prepared holes

摘要

The method involves bringing particles with a center diameter into prepared holes (3), where the center diameter of the particles is smaller than maximum diameter (9) of the holes. The particles brought into the prepared holes are melted. The particles are applied on a substrate surface. The holes are provided with an aspect ratio, which results from depth (7) of the holes and the maximum hole diameter that is larger than 6, where the maximum hole diameter is smaller than 200 micrometer. A laser radiation is irradiated by the holes facing a side of a substrate (1) i.e. silicon wafer. An independent claim is also included for a coating device for filling a prepared hole in a substrate.