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发明名称
ALXGA(1-X)AS-Substrat, Epitaxialwafer für Infrarot-LED, Infrarot-LED, Verfahren zur Herstellung eines ALXGA(1-X) AS-Substrats, Verfahren zur Herstellung eines Epitaxialwafers für eine Infrarot-LED und Verfahren zur Herstellung einer Infrarot-LED
摘要
申请公布号
DE112009001297(T5)
申请公布日期
2011.04.07
申请号
DE20091101297T
申请日期
2009.05.27
申请人
SUMITOMO ELECTRIC INDUSTRIES LTD.
发明人
TANAKA, SO;MIYAHARA, KENICHI;KITABAYASHI, HIROYUKI;KATAYAMA, KOJI;MORISHITA, TOMONORI;MORIWAKE, TATSUYA
分类号
C30B29/42;H01L33/00;C30B19/12;H01L21/205;H01L33/30
主分类号
C30B29/42
代理机构
代理人
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地址
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