| 摘要 |
Embodiments described herein generally relate to methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and/or hydride vapor phase epitaxial (HVPE) processes. In one embodiment, deposition of a group III1-N layer on a substrate is performed in a first chamber, deposition of a group III2-N layer on the substrate is performed in a second chamber, and deposition of a group III3-N layer on the substrate is performed in a chamber different from the chamber where the group III2-N layer is deposited. Between the group III2-N layer deposition and the group III3-N layer deposition, one or more surface treatment processes are performed on the substrate to reduce non-radiative recombination at the interface and improve overall electroluminescence of the produced structure.
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