| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration in element isolation performance while keeping a breakdown voltage of a transistor high. SOLUTION: In a transistor including a gate electrode 122 formed so as to fill the inside of a trench 162 formed so that depth intermittently is changed in a gate width direction in a channel region 108 on an overall surface of a substrate 102, a first offset region 106 and a second offset region 107 are formed below a source region 112 and a drain region 113, respectively. Here, the first offset region 106 and the second offset region 107 are formed so that lower ends in areas contacting with a device isolation insulating film 110 are positioned higher than those of the device isolation insulating film 110. The first and second offset regions are formed below the end of the trench 162. COPYRIGHT: (C)2011,JPO&INPIT |
