| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor-substrate manufacturing method for efficiently manufacturing a semiconductor device using SiC. SOLUTION: First/second silicon carbide substrates 11, 12 are arranged such that each of first/second rear surfaces B1, B2 faces one direction while first/second side faces S1, S2 face each other. After the arrangement step, a silicon carbide layer 30 is formed by a molecular beam epitaxy method on the first/second silicon carbide substrates 11, 12 so as to connect the first/second rear surfaces B1, B2 to each other and to fill a space where the first/second side faces S1, S2 face each other. COPYRIGHT: (C)2011,JPO&INPIT
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