TUNNEL FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a tunnel field effect transistor which is capable of operating at a low subthreshold and is able to be manufactured easily. Specifically disclosed is a tunnel field effect transistor which comprises: a group IV semiconductor substrate that is doped so as to have a first conductivity type; a group III-V compound semiconductor nanowire that is arranged on the (111) surface of the group IV semiconductor substrate and contains a first region that is connected to the (111) surface of the group IV semiconductor substrate and a second region that is doped so as to have a second conductivity type that is different from the first conductivity type; a source electrode that is connected to the group IV semiconductor substrate; a drain electrode that is connected to the second region of the group III-V compound semiconductor nanowire; and a gate electrode that is arranged at a position at which it is possible to affect the interface between the (111) surface of the group IV semiconductor substrate and the group III-V compound semiconductor nanowire, or the interface between the first region and the second region of the group III-V compound semiconductor nanowire.