发明名称 TRANSISTOR WITH A PASSIVE GATE AND METHODS OF FABRICATING THE SAME
摘要 Disclosed is a device having a transistor (204, 244, 286) that includes a source, a drain, a channel region extending between the source and the drain, a gate (196, 238, 284) disposed near the channel region, and a conductive member (197, 240, 264) disposed opposite of the channel region from the gate (196, 238, 284). The conductive member (197, 240, 264) may not overlap the source, the drain, or both the source and the drain.
申请公布号 WO2010030493(A3) 申请公布日期 2011.04.07
申请号 WO2009US54646 申请日期 2009.08.21
申请人 MICRON TECHNOLOGY, INC.;JUENGLING, WERNER 发明人 JUENGLING, WERNER
分类号 H01L21/336;H01L29/78 主分类号 H01L21/336
代理机构 代理人
主权项
地址