| 摘要 |
<p>Disclosed is a composition for forming a resist underlayer film, which is capable of forming a resist underlayer film that has a function as an antireflection film and has excellent pattern transferability and etching resistance. Also disclosed is a pattern forming method using the composition for forming a resist underlayer film. The pattern forming method comprises: (1) a step in which a resist underlayer film is formed, on a substrate to be processed, using a specific composition for forming a resist underlayer film; (1') a step in which an intermediate layer is formed on the resist underlayer film; (2) a step in which a resist coating film is formed on the resist underlayer film, on which the intermediate layer has been formed, by applying a resist composition thereto; (3) a step in which the resist coating film is exposed by selectively irradiating the resist coating film with radiation; (4) a step in which a resist pattern is formed by developing the exposed resist coating film; and (5) a step in which a predetermined pattern is formed on the substrate to be processed by dry etching the intermediate layer, the resist underlayer film and the substrate to be processed using the resist pattern as a mask.</p> |
