摘要 |
PURPOSE: A micro cantilever, manufacturing method thereof, silicon thin film, and manufacturing method thereof are provided to reduce the surface resistivity of a thin film and to increase the stress gradient relax. CONSTITUTION: A Cu-thin film(30) is evaporated on a thin film. The furnace anneal operates on the Cu-thin film. The furnace anneal temperature is less than 200 degrees. A polysilicon cantileve(20) having the stress gradient of amount grows distant on a substrate(10). |