| 摘要 |
PURPOSE: An array panel in which the property of a thin film transistor is improved is provided to maximize the luminous efficiency of each color in consideration of the characteristic of an organic light emitting device without a doping process. CONSTITUTION: First and second gate electrodes are formed in an impurity poly silicon in an island type. First and second active contact holes are formed in an inter-layer insulating film in a switching area. A first ohmic contact layer(38) of an impurity amorphous silicon is contacted with the first active layer. A second ohmic contact layer of an impurity amorphous silicon is contacted with the second active layer. First and second source electrodes are formed in first and second ohmic contact layers. |
