Method for fabricating isolation layer in semiconductor device,申请号KR20070141027-传众专利搜索

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发明名称	Method for fabricating isolation layer in semiconductor device
摘要
申请公布号	KR101026382(B1)	申请公布日期	2011.04.07
申请号	KR20070141027	申请日期	2007.12.28
申请人		发明人
分类号	H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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