发明名称 |
METHOD FOR FORMING ELECTRONIC DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a nanometer-scale feature size in a semiconductor device. <P>SOLUTION: A method for forming an electronic device includes: forming a first layer 106 of a first photosensitive composition containing a first resin component and a first photo active component; exposing the first layer to active radiation through a patterned photomask 110 and developing it to form a first resist pattern 112; heat-treating the first resist pattern in a hard baking process; treating the hard-baked first resist pattern with a substance effective to alkalize the surface; applying a second layer 114 of a second photosensitive composition which contains a second resin component and a photoacid generating agent and is a positive type in contact with the alkaline surface of the first resist pattern; exposing the second layer to the active radiation through the patterned photomask 116; and developing the exposed second layer, thereby forming the second resist pattern 114. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011071480(A) |
申请公布日期 |
2011.04.07 |
申请号 |
JP20100145376 |
申请日期 |
2010.06.25 |
申请人 |
ROHM & HAAS ELECTRONIC MATERIALS LLC |
发明人 |
BAE YOUNG CHEOL;CARDOLACCIA THOMAS;LIU YI |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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