发明名称 METHOD OF PROCESSING WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method of processing a wafer, wherein the method reduces chipping occurring to an annular projection and efficiently discharges a processing liquid, such as an etchant and a resist liquid, to the outside of the wafer. SOLUTION: The method of processing the wafer 11 having, on a top surface, a device region where a plurality of devices are formed and an outer peripheral surplus region surrounding the device region includes a grinding step of simultaneously rotating and bringing a grindstone 25 disposed annularly on a wheel base 24 into contact with a back surface of the wafer to form a circular recess 56 on the back surface, and also forming the annular projection 58 surrounding the circular recess. The grindstone has a grinding surface f or grinding the wafer, a mounting surface mounted on the wheel base having an axis of rotation perpendicular to the grinding surface, and an outer peripheral side face 25c inclined from the mounting surface in the direction of the axis of rotation. In the grinding step, an annular slope which is inclined along an inclined outer peripheral side face of the grindstone is formed from an upper surface inner peripheral side of the annular projection toward the center of the circular recess. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011071287(A) 申请公布日期 2011.04.07
申请号 JP20090220704 申请日期 2009.09.25
申请人 DISCO ABRASIVE SYST LTD 发明人 RIKIISHI TOSHIYASU
分类号 H01L21/304;B24B1/00 主分类号 H01L21/304
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