SUBSTRATE PROCESSING DEVICE

摘要

The substrate processing device is provided with a chamber, a first electrode disposed inside the chamber, a second electrode that is disposed inside the chamber facing the first electrode and that holds the substrate, an RF power source that applies RF voltage of 50 MHz or more to the second electrode, and a pulse power source that repeatedly applies a voltage waveform to the second electrode superimposed with the RF voltage and comprising negative voltage pulses and positive voltage pulses with a delay time of 50 nsec or less from the negative voltage pulses.