| 发明名称 |
VAPOR DEPOSITION REACTOR FOR FORMING THIN FILM ON CURVED SURFACE |
| 摘要 |
<p>A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes first to third portions arranged along an arc of a circle. The first portion includes at least one first injection portion for injecting a material to a recess in the first portion. The second portion is adjacent to the first portion and has a recess communicatively connected to the recess of the first portion. The third portion is adjacent to the second portion and has a recess communicatively connected to the recess of the second portion and an exhaust portion for discharging the material from the vapor deposition reactor.</p> |
| 申请公布号 |
WO2011041255(A1) |
申请公布日期 |
2011.04.07 |
| 申请号 |
WO2010US50358 |
申请日期 |
2010.09.27 |
| 申请人 |
SYNOS TECHNOLOGY, INC.;LEE, SANG, IN |
发明人 |
LEE, SANG, IN |
| 分类号 |
C23C16/455 |
主分类号 |
C23C16/455 |
| 代理机构 |
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代理人 |
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