FORMATION OF LIQUID-LIKE SILICA LAYER BY REACTION OF ORGANOSILICON COMPOUND AND HYDROXYL FORMING COMPOUND

摘要

PROBLEM TO BE SOLVED: To provide a method and an apparatus for uniformly depositing a silicon oxide layer having a low dielectric constant for use as a gap fill layer, a pre-metal dielectric layer, an inter-metal dielectric layer, a shallow trench isolation dielectric layer, etc., in sub-micron devices.

SOLUTION: A silicon oxide layer having a low relative dielectric constant is deposited by the reaction of an organosilicon compound with a hydroxyl forming compound at a substrate temperature less than about 400°C. The low dielectric constant thin films contain residual carbon and are useful for gap fill layers, pre-metal dielectric layers, inter-metal dielectric layers, and shallow trench isolation dielectric layers in sub-micron devices. The hydroxyl compound can be prepared prior to deposition from water or an organic compound. The silicon oxide layers are preferably deposited at a substrate temperature less than about 40°C onto a liner layer produced from the organosilicon compound to provide gap fill layers having a dielectric constant less than about 3.0.

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