| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor in which a metal silicon compound thin film is used as a channel region. SOLUTION: In this thin film transistor, a transition metal silicon compound thin film formed of a compound of a transition metal and silicon is used as a channel region, the compound of a transition metal and silicon containing, as a unit structure, a transition metal-containing silicon cluster (MSiz) in which the circumferences of the transition metal atoms M are surrounded by z pieces of silicon atoms Si, wherein, when the composition ratio of silicon to the transition metal (=silicon/transition metal) is n, the composition ratio n of silicon to the transition metal (=silicon/transition metal) is 7 to 16, and n/Z is 0.778 to 1.81. In this case, Z is an average value of the number z of the silicon atoms surrounding the circumferences of the transition metal atoms M. COPYRIGHT: (C)2011,JPO&INPIT
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