| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that improves the amplification factor during bipolar operation in an MOS transistor having a floating structure. SOLUTION: The semiconductor device 1 includes a plurality of active regions 2 divided separately by an element isolation region 3 formed on a substrate 100, two impurity diffusion layers formed, respectively, in the active regions 2 and serving as a source diffusion layer 149b and a drain diffusion layer 149a, and a first gate electrode 110 and a second gate electrode 120 arranged to touch the active regions 2 through a gate insulating film 125 between the impurity diffusion layers and to adjoin each other in the gate length direction through an insulating film 136. COPYRIGHT: (C)2011,JPO&INPIT
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