| 摘要 |
A lateral-diffusion metal-oxide-semiconductor device includes a source in a racetrack shaped active area, a first field oxide region isolating and surrounding the racetrack shaped active area, a racetrack shaped gate surrounding the source, and a drain disposed at one side of the gate opposite to the source. The source includes a P+ doping region in a P well and an N+ doping region butting on the P+ doping region.
|
