SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

A semiconductor integrated circuit device has: a MISFET having source/drain diffusion layers; first plugs respectively connected to the source/drain diffusion layers; a first interconnection connected to one of the source/drain diffusion layers through the first plug; a second plug electrically connected to the other Of the source/drain diffusion layers through the first plug; a second interconnection connected to the second plug; and a capacitor electrode located above a gate electrode of the MISFET. The first interconnection is formed not above the lower capacitor electrode, while the second interconnection is formed above the upper capacitor electrode. A plug connecting the first interconnection and another interconnection is not provided at an upper location of the one of the source/drain diffusion layers. The first interconnection is not provided at an upper location of the other of the source/drain diffusion layers.