发明名称 MONOLITHIC PARALLEL INTERCONNECT STRUCTURE
摘要 An optoelectronic device having a monolithic interconnect structure includes a continuous anode layer, a discontinuous cathode layer, and an electroactive layer sandwiched between the continuous anode layer and the discontinuous cathode layer.
申请公布号 WO2011041050(A1) 申请公布日期 2011.04.07
申请号 WO2010US46812 申请日期 2010.08.26
申请人 GENERAL ELECTRIC COMPANY;FARQUHAR, DONALD, SETON;DUGGAL, ANIL, RAJ;HERZOG, MICHAEL, SCOTT;YOUMANS, JEFFREY, MICHAEL;RAKUFF, STEFAN;BOYD, LINDA, ANN 发明人 FARQUHAR, DONALD, SETON;DUGGAL, ANIL, RAJ;HERZOG, MICHAEL, SCOTT;YOUMANS, JEFFREY, MICHAEL;RAKUFF, STEFAN;BOYD, LINDA, ANN
分类号 H01L51/52 主分类号 H01L51/52
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