发明名称 |
PATTERNABLE LOW-K DIELECTRIC INTERCONNECT STRUCTURE WITH A GRADED CAP LAYER AND METHOD OF FABRICATION |
摘要 |
<p>An interconnect structure is provided that includes at least one patterned and cured low-k material (18', 22') located on a surface of a patterned graded cap layer (14). The at least one cured and patterned low-k material and the patterned graded cap layer each have conductively filled regions (26) embedded therein. The patterned and cured low-k material is a cured product of a functionalized polymer, copolymer, or a blend including at -least two of any combination of polymers and/or copolymers having one or more acid-sensitive imageable groups, and the graded cap layer includes a lower region that functions as a barrier region and an upper region that has antireflective properties of a permanent antireflective coating.</p> |
申请公布号 |
WO2011038995(A1) |
申请公布日期 |
2011.04.07 |
申请号 |
WO2010EP62226 |
申请日期 |
2010.08.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;LIN, QINGHUANG;NEUMAYER, DEBORAH, ANN |
发明人 |
LIN, QINGHUANG;NEUMAYER, DEBORAH, ANN |
分类号 |
H01L21/768;H01L21/027 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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