发明名称 |
Herstellungsverfahren eines TFT-Array-Substrats |
摘要 |
<p>Gate and source electrodes (106,108) are connected to intersecting gate and data lines (102,104), respectively. A passivation layer is formed on a semiconductor layer that forms a channel between the source electrode and drain electrode (110). A gate pad (150) has a lower electrode (152) that extends from the gate line, while a data pad (160) has a bottom electrode (162) that separates from the data line. An independent claim is also included for a thin film transistor (TFT) array substrate manufacturing method.</p> |
申请公布号 |
DE102005058680(B4) |
申请公布日期 |
2011.04.07 |
申请号 |
DE20051058680 |
申请日期 |
2005.12.08 |
申请人 |
LG DISPLAY CO. LTD. |
发明人 |
CHOI, YOUNGSEOK;YU, HONGWOO;CHO, KISUL;LEE, JAEOW;JUNG, BOKYONG |
分类号 |
H01L21/84;G02F1/1333;H01L27/12 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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