| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of surely reading data from a selected memory cell. <P>SOLUTION: The nonvolatile semiconductor memory device is equipped with a control circuit for controlling a data reading operation. When data read-out is executed, the control circuit applies a voltage Vcgrv which is a voltage between a plurality of threshold voltage distributions to a selected word line WLn connected to the selected memory cell Mn, applies voltages Vcgrv equal to the voltage Vcgrv or lower than unselected word lines WLn+1, WLn-1 adjacent to the selected word line WLn applies voltages VcgrvH equal to read out pass voltages Vread or higher capable of making conductive the nonvolatile memory cell to unselected word lines WLn+2, WLn-2 adjacent to the unselected word lines WLn+1, WLn-1, and applies the read-out path voltage Vread to unselected word lines other than the unselected word lines WLn+1, WLn-1 and the unselected word lines WLn+2, WLn-2. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
