Elektronischer Leistungsmodul und Leistungsbauelement für diesen Modul

摘要

Electronic power module comprises at least one semiconductor power component (2) on electrically insulating substrate (1), where one face of the power component (2) is partly covered with a diamond layer (3) and partly metalized (4). The metalized part (4) is in contact with strip conductor (5) implemented on the substrate (1) surface, and the part covered with the diamond layer (3) corresponds to an opening (8) in the substrate (1). The diamond layer (3) is deposited on the semiconductor power component (2) by the chemical vapor deposition (CVD) method. The substrate (1) is of aluminum nitride (AlN) or of aluminum oxide (alumina). The semiconductor power component (claimed) for equipping the electronic power module (claimed) comprises a face metalized on its periphery and covered with the diamond layer (3) on the remaining surface. The substrate (1) face opposite the semiconductor component (2) is cooled by a heat-carrying fluid (6) which flows in the opening (8) and to the surface of the diamond layer (3). The semiconductor power component is an IGBT.