发明名称 |
SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE, AND METHOD FOR PREPARING SPUTTERING TARGET |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a target which suppresses the generation of nodules when a transparent conductive oxide is formed by a sputtering process, and can stably perform sputtering; to provide a transparent conductive oxide composed of the target; and to provide a method for preparing the sputtering target. <P>SOLUTION: A transparent conductive oxide is film-deposited from a sputtering target comprising at least indium oxide and zinc oxide; the atomic ratio represented by In/(In+Zn) is set to a value within the range of 0.75 to 0.97; a hexagonal layered compound represented by In<SB>2</SB>O<SB>3</SB>(ZnO)<SB>m</SB>wherein m is an integer of 2 to 20 is contained, and the crystal grain size of the hexagonal layered compound is set to a value of 5 μm or less. <P>COPYRIGHT: (C)2011,JPO&INPIT |
申请公布号 |
JP2011068993(A) |
申请公布日期 |
2011.04.07 |
申请号 |
JP20100238811 |
申请日期 |
2010.10.25 |
申请人 |
IDEMITSU KOSAN CO LTD |
发明人 |
INOUE KAZUYOSHI;SHIBUYA TADAO;UMIGAMI AKIRA |
分类号 |
C23C14/08;C03C17/245;C04B35/00;C04B35/01;C04B35/453;C04B35/457;C04B35/645;C23C14/34;G02F1/1343;H01B5/14;H01L21/28;H01L21/285 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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