发明名称 POWER SEMICONDUCTOR DRIVE
摘要 <P>PROBLEM TO BE SOLVED: To reduce dead time equivalent to a difference of on/off delay time of an insulation transfer circuit without increasing the size and cost of an inverter. <P>SOLUTION: A control computing section 11 and a PWM signal generation section 12 generate a first drive pulse signal for driving a power semiconductor device 33up, and a second drive pulse signal for driving a power semiconductor device 33un. A PWM output section 13 outputs the first drive pulse signal having a positive logic from an amplifier 13a, and outputs the second drive pulse signal having a negative logic from an inverting amplifier 13b. The insulation transfer circuit 21a electrically insulates the first drive pulse signal having a positive logic for transfer to an amplifier 22a. The insulation transfer circuit 21b electrically insulates the second drive pulse signal having a negative logic for transfer to an inverting amplifier 22b. The amplifier 22a drives the power semiconductor device 33up, and the inverting amplifier 22b inverts the second drive pulse signal having a negative logic to drive the power semiconductor device 33un. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011072075(A) 申请公布日期 2011.04.07
申请号 JP20090219062 申请日期 2009.09.24
申请人 NISSAN MOTOR CO LTD 发明人 YOSHIMURA MINORU;SASAKI HIROAKI;YONETANI SHINSUKE
分类号 H02M7/537;H02M7/48;H02P27/06 主分类号 H02M7/537
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