| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of obtaining image data reduced in an effect of noise charge when performing an imaging operation of a global shutter system. SOLUTION: A plurality of pixel parts of the solid-state imaging device each include; a photodiode for generating charge of an amount corresponding to quantity of incident light, an FD region as a charge storing part for storing the charge, and a first transistor having a gate electrode electrically connected to the FD region. The FD region has a contact for being electrically connected to a gate electrode of the first transistor within the region and is surrounded by gate electrodes G<SB>1</SB>and G<SB>2</SB>of second and third transistors, respectively, and an element isolation region. A side of a contact C<SB>FD</SB>side of both the gate electrodes G<SB>1</SB>and G<SB>2</SB>or either of them protrudes on a boundary (broken line) between the FD region and the element isolation region to a side where the contact C<SB>FD</SB>exists more than the other parts in contact with the FD region. COPYRIGHT: (C)2011,JPO&INPIT
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