| 摘要 |
PROBLEM TO BE SOLVED: To provide a lamination SOI wafer having a thickness of tens to hundredsμm, including a terrance-free SOI layer having a wide device forming area, and allowing handling in the same way as for the regular wafer whose both sides are symmetrical, and to provide a method for manufacturing the same. SOLUTION: The lamination SOI wafer has an SOI layer formed on a supporting wafer through an embedded oxide film. The end surface of the SOI layer and the end surface of the supporting wafer are formed to the round end surface continuous in a cross-section direction or the end surface with taper, the supporting wafer has an oxide film on its rear surface, and the end surface of the SOI layer and the end surface of the supporting wafer respectively have no processing distortion, and an asperity Ra of each end surface is not more than 0.1μm. COPYRIGHT: (C)2011,JPO&INPIT
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