发明名称 Method for depositing a thin-film polymer in a low-pressure gas phase
摘要 The invention relates to a method for depositing one or more thin layers. In said method, a process gas forming a polymer streams into a deposition chamber (8) along with a carrier gas by means of a gas inlet element (3) in order to deposit a thin layer, in particular in the form of a polymer, on the surface (7′) of a substrate (7) which lies on a supporting surface (4′) of a susceptor, said supporting surface (4′) lying opposite the gas inlet element (3), at a distance therefrom. In order to allow the coating process to be carried out at substrate temperatures that only slightly exceed the temperature of the supporting surface of the susceptor, the gas inlet element (3) and/or the supporting surface (4′) are/is temperature-controlled in such a way that the temperature (TS) of the supporting surface (4′) is lower than the temperature (TG) of the gas inlet element (3). More particularly, at a first pressure (P1) prevailing in the deposition chamber (8) before the process gas penetrates into the deposition chamber (8), the substrate (7) lying on the supporting surface (4′) is stabilized, by dissipating heat to the susceptor (4), to a substrate temperature (TD) that only slightly exceeds the temperature (TS) of the supporting surface (4′) but is significantly lower than the temperature (TG) of the gas inlet element (3), whereupon the pressure (P1) in the deposition chamber (8) is reduced to a process pressure (P2), and the process gas penetrates into the deposition chamber (8) when the process pressure (P2) has been reached.
申请公布号 US2011081504(A1) 申请公布日期 2011.04.07
申请号 US20090995439 申请日期 2009.05.14
申请人 AIXTRON AG 发明人 GERSDORFF MARKUS
分类号 B05D5/06;B05D5/12 主分类号 B05D5/06
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