| 摘要 |
<p>In the provided method for manufacturing a semiconductor device, a plurality of light-blocking films or the like are formed on the surface of a first insulation film. After that, a dummy pattern is formed on the surface of a second insulation film between adjacent light-blocking films or the like such that the height of the dummy pattern from the surface of the first insulation film is the same as the height of the surface of the second insulation film on top of the light-blocking films or the like. Next, a third insulation film that covers the dummy pattern and has a flat surface is formed on the surface of the second insulation film. After that, a base layer is attached to the support substrate on the flat surface of the third insulation film.</p> |
