| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein the thickness of the semiconductor device can be made small by reducing the occurrence of warpage due to stress of a film formed on a semiconductor substrate. <P>SOLUTION: The semiconductor device 1A (1) includes: a rectangular semiconductor substrate 10 arranged with a semiconductor device on one surface side; and a reinforcing layer 20 arranged on the one surface side of the semiconductor substrate, wherein the reinforcing layer is arranged at a part located in an outer edge of the semiconductor substrate, and extending along at least one side out of four sides surrounding the semiconductor device. <P>COPYRIGHT: (C)2011,JPO&INPIT |
