| 摘要 |
A solid-state image pickup device includes: a semiconductor substrate; and a plurality of pixel circuits formed on the semiconductor substrate; each of the plurality of pixel circuits formed on the semiconductor substrate including a photoelectric conversion element, a first buried gate electrode formed adjacent to the photoelectric conversion element, a second buried gate electrode formed away from each of the photoelectric conversion element and the first buried gate electrode, a first diffusion layer formed between the first buried gate electrode and the second buried gate electrode, and a second diffusion layer formed between the first buried gate electrode and the second buried gate electrode away from the first diffusion layer so as to overlap the first diffusion layer; wherein electric charges accumulated in the photodiode conversion element are transferred to the second diffusion layer through the first diffusion layer.
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