发明名称 MANUFACTURING METHOD OF FLAT TYPE DISCHARGE PLATE AND MANUFACTURED DISCHARGE PLATE BY MANUFACTURING METHOD AND INSTALLED DISCHARGE PLATE OF DISCHARGE PLATE STRUCTURE
摘要 PURPOSE: A discharge plate of a discharge plate structure is provided to reduce the manufacturing processes by cutting a planar silicon wafer. CONSTITUTION: A planar silicon wafer with 0.20-1.0mm thickness is manufactured. The silicon wafer has 0.50-3.0mm width and 1 to 1~5 rate thickness. The silicon wafer is consecutively cut by the 6-40mm length. The silicon wafer is slantly cut with 10 to 40 degree at the 3-20mm length. The curvature of an inclination tip(12) end part(121) of the cut discharge plate(1) is polished at 20-300μm.
申请公布号 KR20110036263(A) 申请公布日期 2011.04.07
申请号 KR20090093827 申请日期 2009.10.01
申请人 DONG IL TECHNOLOGY LTD. 发明人 KIM, YOUNG MIN
分类号 H05F3/04;H01T19/04 主分类号 H05F3/04
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