<p>PURPOSE: A wafer level package with a penetration electrode and a manufacturing method thereof are provided to stack semiconductor dies without increasing the thickness of a semiconductor package, thereby miniaturizing the semiconductor package. CONSTITUTION: A first semiconductor die comprises first and second sides and a penetration electrode(115). An active area is formed on the first side. A pocket is formed on the second side. The penetration electrode penetrates the first and second sides and is formed on an active area and the outer circumference of the pocket. A second semiconductor die(120) is placed in the pocket of the first semiconductor die. A rewiring layer(140) electrically connects the penetration electrode of the first semiconductor die with the second semiconductor die. The penetration electrode is made of solder balls connected to the rewiring layer.</p>
