SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To improve pixel characteristics by suppressing the generation of at least a dark current and white spots while stabilizing well potential in an effective pixel region in a solid-state image pickup device.

SOLUTION: A solid-state image pickup device has a first conductive type semiconductor well region and a plurality of pixels which are formed in the semiconductor well region and comprise photoelectric conversion sections PD and pixel transistors Tr1 to Tr4. Moreover, the solid-state image pickup device has element isolation regions 82 and 85 having an insulating film and the element isolation regions which do not have the insulating films between the required pixel transistors.

COPYRIGHT: (C)2011,JPO&INPIT