GERMANIUM FINFET WITH METAL GATE AND STRESSOR

摘要

PROBLEM TO BE SOLVED: To provide a germanium FinFET with metal gates and stressors.

SOLUTION: An integrated circuit structure includes: an n-type fin field effect transistor (FinFET) and a p-type FinFET. The n-type FinFET includes a first germanium fin over a substrate; a first gate dielectric on a top surface and sidewalls of the first germanium fin; and a first gate electrode on the first gate dielectric. The p-type FinFET includes: a second germanium fin over the substrate; a second gate dielectric on a top surface and sidewalls of the second germanium fin; and a second gate electrode on the second gate dielectric. The first gate electrode and the second gate electrode are formed of a same material having a work function close to an intrinsic energy level of germanium.

COPYRIGHT: (C)2011,JPO&INPIT